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| 31. | intrinsic carrier concentration |
| 本征载流子浓度 |
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| 32. | light carrier injection |
| 光载流子注入法 |
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| 33. | trapped carrier |
| 被俘获的载流子 |
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| 34. | nonequilibrium carrier concentration |
| 非平衡载流子浓度 |
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| 35. | majority carrier admittance |
| 主载流子导纳 |
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| 36. | carrier transpositio |
| 载流子移位|载波交叉 |
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| 37. | minority carrier life time |
| 少数载流子寿命 |
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| 38. | nonequilibrium carrier lifetime |
| 非平衡载流子寿命 |
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| 39. | carrier storage delay time |
| 载流子存储延迟时间 |
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| 40. | carrier drift transistor |
| 载流子漂移型晶体管 |
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